HKQ150N65S2HEK
HKQ150N65S2HEK
HKQ150N65S2HEK
HKQ150N65S2HEK
  • Transistors - IGBTs - Single HKQ150N65S2HEK
  • Transistors - IGBTs - Single HKQ150N65S2HEK
  • Transistors - IGBTs - Single HKQ150N65S2HEK
  • Transistors - IGBTs - Single HKQ150N65S2HEK
HKQ150N65S2HEK
Category
Transistors - IGBTs - Single
Manufacturer
HOLTO
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
Part Number HKQ150N65S2HEK
Manufacturer HOLTO
Package TO-247-Plus-3
Collector-Emitter Voltage 650V
Collector Current 160A
Pulsed Collector Current 600A
Gate-Emitter Voltage ±20V
Gate Threshold Voltage 3.2 ~ 4.7 V
Power Dissipation 880W
Junction Temperature -40°C ~ +175°C
Thermal Resistance 0.17°C/W
Gate Charge 450nC

Data sheet: Work in prgress, stay tuned!

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