HTH8G02P1K4H(B):High Power, High Efficiency,High Ruggedness

Author: ANDESOURCE Date: 25/01/07
0

Among ANDESOURCE’s high performance,cost-effective HOLTO RF chip alternative solutions (over 50% savings compared to premium brand's equivalent), HTH8G02P1K4H(B) stands out due to its high output power, high efficiency,rugged design and versatility in amplifier configurations, making it a reliable and versatile component for high-power RF applications. Its ability to perform across a broad frequency range, combined with robustness and efficient thermal management, ensures it is in demand for industrial, scientific, medical, communication and other purposes. This combination of features makes it a preferred choice for applications requiring consistent, high-performance RF power, contributing to its popularity across multiple sectors.

Now, let's go over the key specifications and standout features of the HTH8G02P1K4H(B).

 

Key Specifications Overview 

HOLTO RF Chip Model

Equivalent Chip

HTH8G02P1K4H(B)

BLF188

Key   Specifications

Min.Freq.(MHz)

1.8

Max.Freq.(MHz)

200

VDD(V)

50

Psat(W)

1400

EFF@Psat

78%

Gain   @ Psat (dB)

26.8

Package

ACC3210B-4L

Process  

LDMOS

 

(Contact us for a quote.)

 

HTH8G02P1K4H(B):High Power, High Efficiency,High Ruggedness

 

Exceptional Features

 

1. High Power and Efficiency

The HTH8G02P1K4H(B) delivers a saturated output power of 1400W (Psat), which is critical for high-power RF transmission applications like broadcasting, industrial heating, and medical applications (e.g., MRI and RF ablation). High power is essential for these applications because they often need to transmit signals over large distances or through materials that require significant energy input.

 

The 78% efficiency at Psat ensures that much of the input power is converted into useful RF output power, while only 22% of the input is lost as heat. This high efficiency reduces the energy consumption and operating costs over time, making it a cost-effective choice, especially in long-duration applications.

 

Additionally, high efficiency helps reduce the need for excessive cooling systems and extends the device's operational life by minimizing thermal stress, making the device not only powerful but also economically and thermally sustainable.

 

2. Broad Frequency Range

The HTH8G02P1K4H(B)’s wide frequency range of 1.8 MHz to 200 MHz makes it incredibly versatile and applicable in a variety of RF applications across multiple industries. This range spans both low-frequency industrial applications and higher-frequency communications, offering versatility across diverse systems.The ability to handle such a broad frequency spectrum means that users can adopt this single device in multiple types of systems, including but not limited to industrial,medical,communications,etc., without needing a specialized component for each application. This multi-industry appeal drives its popularity.

 

3. Robust and Reliable

The HTH8G02P1K4H(B) is built for reliability under demanding conditions, which is a key requirement for many RF applications, particularly in mission-critical environments.

 

High VSWR tolerance ensures that the chip can handle impedance mismatches without significant degradation in performance, which is important in real-world conditions where the system may encounter variations in load or environmental conditions.

 

The excellent thermal stability of the device means it can operate in high-power scenarios without overheating. With low thermal resistance, it maintains operational efficiency even in environments with fluctuating temperatures, making it ideal for field deployments where temperature control might be a challenge.

 

The integrated ESD protection further adds to its robustness. ESD (Electrostatic Discharge) is a common cause of damage in electronic components, and by incorporating this feature, the device enhances its durability during handling and use in real-world situations.

 

4. Versatility in Amplifier Configurations

The HTH8G02P1K4H(B) can be used in single-ended, push-pull, and Doherty amplifier configurations, offering a high level of flexibility for system designers. In single-ended configurations, it provides a simple and cost-effective solution for low-power applications, while in push-pull setups, it enables improved signal quality and efficiency for high-power requirements. The Doherty amplifier compatibility is particularly valuable for energy-efficient systems, such as telecommunications, broadcasting, and industrial RF applications, where optimizing power usage without sacrificing output is crucial. This versatility allows it to meet the demands of various RF power applications, driving its popularity across multiple industries.

(Contact us for a quote.)

 

HTH8G02P1K4H(B):High Power, High Efficiency,High Ruggedness

 

Top Reasons to Choose ANDESOURCE HOLTO RF Chip Alternative Solutions

Choosing ANDESOURCE’s HOLTO RF chip alternative solutions offers a range of benefits that make it the ideal choice for cost-conscious and performance-focused applications:

 

Sustainable Supply

Avoid supply chain disruptions with a stable and reliable source for high-performance RF chips. ANDESOURCE ensures consistent availability, helping your projects stay on track and within budget.

 

Original Factory Support

Receive full technical debugging assistance directly from the factory, ensuring seamless integration and peak performance of our RF chips in your system.

 

Significant Cost Savings

Enjoy over 50% cost savings compared to premium brands without compromising on quality or performance. These savings help you achieve both budget efficiency and high functionality.

Ready to enhance your RF systems with high-performance and cost-effective solutions? Click here to get a quote or speak with our team. Let ANDESOURCE help you achieve unparalleled performance while saving costs.

 


2025 New Offers