SIHD2N80E-GE3
SIHD2N80E-GE3
SIHD2N80E-GE3
SIHD2N80E-GE3
  • Transistors - FETs, MOSFETs - Single SIHD2N80E-GE3
  • Transistors - FETs, MOSFETs - Single SIHD2N80E-GE3
  • Transistors - FETs, MOSFETs - Single SIHD2N80E-GE3
  • Transistors - FETs, MOSFETs - Single SIHD2N80E-GE3
SIHD2N80E-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Electro-Films (EFI) / Vishay
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:SIHD2N80E-GE3
Description:MOSFET N-CH 800V 2.8A DPAK
Lead Free Status / RoHS Status:
Vgs(th) (Max) @ Id4V @ 250µA
Power Dissipation (Max)62.5W (Tc)
SeriesE
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Gate Charge (Qg) (Max) @ Vgs19.6nC @ 10V
Moisture Sensitivity Level (MSL)1 (Unlimited)
FET TypeN-Channel
Detailed DescriptionN-Channel 800V 2.8A (Tc) 62.5W (Tc) Surface Mount D-PAK (TO-252AA)
PackagingTape & Reel (TR)
Drain to Source Voltage (Vdss)800V
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Meta Part NumberSIHD2N80E-GE3TR-ND
Other NamesSIHD2N80E-GE3TR
Operating Temperature-55°C ~ 150°C (TJ)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Supplier Device PackageD-PAK (TO-252AA)
Input Capacitance (Ciss) (Max) @ Vds315pF @ 100V
Rds On (Max) @ Id, Vgs2.75 Ohm @ 1A, 10V
FET Feature-
Vgs (Max)±30V
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)10V

Data sheet: Work in prgress, stay tuned!

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