SI4816BDY-T1-GE3, Electro-Films (EFI) / Vishay, Andesource | Worlds Leading Distributor of Electronic Components and LCD Display

Specifications

Data Sheet

TYPE	DESCRIPTION
Part Number:	SI4816BDY-T1-GE3
Description:	MOSFET 2N-CH 30V 5.8A 8-SOIC
Lead Free Status / RoHS Status:
Drain to Source Voltage (Vdss)	30V
FET Type	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	5.8A, 8.2A
Vgs(th) (Max) @ Id	3V @ 250µA
Power - Max	1W, 1.25W
Packaging	Tape & Reel (TR)
Supplier Device Package	8-SO
Series	LITTLE FOOT®
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Detailed Description	Mosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SO
Other Names	SI4816BDY-T1-GE3TR ","SI4816BDYT1GE3
Meta Part Number	SI4816BDY-T1-GE3TR-ND
FET Feature	Logic Level Gate
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Base Part Number	SI4816
Gate Charge (Qg) (Max) @ Vgs	10nC @ 5V
Rds On (Max) @ Id, Vgs	18.5 mOhm @ 6.8A, 10V
Package / Case	8-SOIC (0.154, 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds	-
Operating Temperature	-55°C ~ 150°C (TJ)

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