MJD45H11T4G
MJD45H11T4G
MJD45H11T4G
MJD45H11T4G
  • Transistors - Bipolar (BJT) - Single MJD45H11T4G
  • Transistors - Bipolar (BJT) - Single MJD45H11T4G
  • Transistors - Bipolar (BJT) - Single MJD45H11T4G
  • Transistors - Bipolar (BJT) - Single MJD45H11T4G
MJD45H11T4G
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
AMI Semiconductor/onsemi
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:MJD45H11T4G
Description:TRANS PNP 80V 8A DPAK
Lead Free Status / RoHS Status:
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Frequency - Transition90MHz
Detailed DescriptionBipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Surface Mount DPAK
Meta Part NumberMJD45H11T4GOSTR-ND
Current - Collector Cutoff (Max)1µA
PackagingTape & Reel (TR)
Mounting TypeSurface Mount
Voltage - Collector Emitter Breakdown (Max)80V
Transistor TypePNP
Other NamesMJD45H11T4GOS
MJD45H11T4GOS-ND
MJD45H11T4GOSTR
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Base Part NumberMJD45H11
Supplier Device PackageDPAK
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Moisture Sensitivity Level (MSL)1 (Unlimited)
Series-
Power - Max1.75W
Current - Collector (Ic) (Max)8A
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A, 1V
Manufacturer Standard Lead Time4 Weeks
Operating Temperature-55°C ~ 150°C (TJ)

Data sheet: Work in prgress, stay tuned!

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