MB85R4M2TFN-G-ASE1
MB85R4M2TFN-G-ASE1
MB85R4M2TFN-G-ASE1
MB85R4M2TFN-G-ASE1
  • Memory MB85R4M2TFN-G-ASE1
  • Memory MB85R4M2TFN-G-ASE1
  • Memory MB85R4M2TFN-G-ASE1
  • Memory MB85R4M2TFN-G-ASE1
MB85R4M2TFN-G-ASE1
Category
Memory
Manufacturer
Fujitsu Electronics America, Inc.
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:MB85R4M2TFN-G-ASE1
Description:IC FRAM 4M PARALLEL 44TSOP
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Supplier Device Package44-TSOP
Package / Case44-TSOP (0.400, 10.16mm Width)
PackagingTray
Voltage - Supply1.8 V ~ 3.6 V
Detailed DescriptionFRAM (Ferroelectric RAM) Memory IC 4Mb (256K x 16) Parallel 150ns 44-TSOP
Operating Temperature-40°C ~ 85°C (TA)
Series-
Moisture Sensitivity Level (MSL)1 (Unlimited)
Other Names865-1266
"######"865-1266-1
"######"865-1266-1-ND
TechnologyFRAM (Ferroelectric RAM)
Meta Part Number865-1266-ND
Write Cycle Time - Word, Page150ns
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Memory InterfaceParallel
Memory Size4Mb (256K x 16)
Memory TypeNon-Volatile
Manufacturer Standard Lead Time20 Weeks
Memory FormatFRAM
Access Time150ns
Mounting TypeSurface Mount

Data sheet: Work in prgress, stay tuned!

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