IRFB4332PBF
IRFB4332PBF
IRFB4332PBF
IRFB4332PBF
  • Transistors - FETs, MOSFETs - Single IRFB4332PBF
  • Transistors - FETs, MOSFETs - Single IRFB4332PBF
  • Transistors - FETs, MOSFETs - Single IRFB4332PBF
  • Transistors - FETs, MOSFETs - Single IRFB4332PBF
IRFB4332PBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Cypress Semiconductor (Infineon Technologies)
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:IRFB4332PBF
Description:MOSFET N-CH 250V 60A TO-220AB
Lead Free Status / RoHS Status:
Operating Temperature-40°C ~ 175°C (TJ)
Supplier Device PackageTO-220AB
Mounting TypeThrough Hole
SeriesHEXFET®
Power Dissipation (Max)390W (Tc)
TechnologyMOSFET (Metal Oxide)
Meta Part NumberIRFB4332PBF-ND
Other NamesSP001556040
FET Feature-
Detailed DescriptionN-Channel 250V 60A (Tc) 390W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
FET TypeN-Channel
Vgs(th) (Max) @ Id5V @ 250µA
Package / CaseTO-220-3
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)250V
Rds On (Max) @ Id, Vgs33 mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds5860pF @ 25V
PackagingTube
Vgs (Max)±30V
Moisture Sensitivity Level (MSL)1 (Unlimited)

Data sheet: Work in prgress, stay tuned!

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