CY7C1412AV18-200BZXC
CY7C1412AV18-200BZXC
CY7C1412AV18-200BZXC
CY7C1412AV18-200BZXC
  • Memory CY7C1412AV18-200BZXC
  • Memory CY7C1412AV18-200BZXC
  • Memory CY7C1412AV18-200BZXC
  • Memory CY7C1412AV18-200BZXC
CY7C1412AV18-200BZXC
Category
Memory
Manufacturer
Cypress Semiconductor
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:CY7C1412AV18-200BZXC
Description:IC SRAM 36M PARALLEL 165FBGA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
PackagingTray
Other Names428-2160
"######"CY7C1412AV18-200BZXC-ND
TechnologySRAM - Synchronous, QDR II
Write Cycle Time - Word, Page-
Base Part NumberCY7C1412
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Package / Case165-LBGA
Series-
Mounting TypeSurface Mount
Memory FormatSRAM
Meta Part Number428-2160-ND
Memory TypeVolatile
Detailed DescriptionSRAM - Synchronous, QDR II Memory IC 36Mb (2M x 18) Parallel 200MHz 165-FBGA (15x17)
Clock Frequency200MHz
Voltage - Supply1.7 V ~ 1.9 V
Moisture Sensitivity Level (MSL)3 (168 Hours)
Memory Size36Mb (2M x 18)
Supplier Device Package165-FBGA (15x17)
Memory InterfaceParallel
Operating Temperature0°C ~ 70°C (TA)

Data sheet: Work in prgress, stay tuned!

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