BLM9D2327S-50PBG
BLM9D2327S-50PBG
BLM9D2327S-50PBG
BLM9D2327S-50PBG
  • Transistors - FETs, MOSFETs - RF BLM9D2327S-50PBG
  • Transistors - FETs, MOSFETs - RF BLM9D2327S-50PBG
  • Transistors - FETs, MOSFETs - RF BLM9D2327S-50PBG
  • Transistors - FETs, MOSFETs - RF BLM9D2327S-50PBG
BLM9D2327S-50PBG
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Ampleon
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range23002700MHz
PL(3dB)nominal output power at 3 dB Doherty gain compression58W
Test signal: 1-c LTE @ PL(AV) = 5 W (12.7 dB OBO)
VDSdrain-source voltage2600 MHz [0]28V
PL(M)peak output power2600 MHz [0]47.7dBm
Gppower gain2600 MHz [0]29 [1]dB
ηDdrain efficiency2600 MHz [0]25.7 [1]%
ACPR20Madjacent channel power ratio (20 MHz)2600 MHz [0]-39.5 [1]dBc
Test signal: 1-c LTE @ PL(AV) = 9.33 W (8 dB OBO)
VDSdrain-source voltage2600 MHz [0]28V
PL(M)peak output power2600 MHz [0]47.7dBm
Gppower gain2600 MHz [0]28.7 [2]dB
ηDdrain efficiency2600 MHz [0]41.1 [2]%
ACPR20Madjacent channel power ratio (20 MHz)2600 MHz [0]-36.2 [2]dBc

Data sheet: Work in prgress, stay tuned!

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