B10G4750N12DL
B10G4750N12DL
B10G4750N12DL
B10G4750N12DL
  • Transistors - FETs, MOSFETs - RF B10G4750N12DL
  • Transistors - FETs, MOSFETs - RF B10G4750N12DL
  • Transistors - FETs, MOSFETs - RF B10G4750N12DL
  • Transistors - FETs, MOSFETs - RF B10G4750N12DL
B10G4750N12DL
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Ampleon
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range47005000MHz
PL(3dB)nominal output power at 3 dB gain compression12W
Test signal: CW pulsed
VDSdrain-source voltage[0]28V
Gppower gain[0]2730dB
畏Ddrain efficiency[0]2632%
RLininput return loss[0]-13-8dB

Data sheet: Work in prgress, stay tuned!

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