2SC3356-T1B-R25-A
2SC3356-T1B-R25-A
2SC3356-T1B-R25-A
  • Transistors - Bipolar (BJT) - RF 2SC3356-T1B-R25-A
  • Transistors - Bipolar (BJT) - RF 2SC3356-T1B-R25-A
  • Transistors - Bipolar (BJT) - RF 2SC3356-T1B-R25-A
2SC3356-T1B-R25-A
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
CEL (California Eastern Laboratories)
RoHS
YES
Certification
ISO14001:2015 Certification ISO 45001:2018 Certification ISO 9001:2015 Certification
Delivery
Delivery
Payment
Payment

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Specifications
Data Sheet
TYPEDESCRIPTION
Part Number:2SC3356-T1B-R25-A
Description:SAME AS NE85633 NPN SILICON AMPL
Lead Free Status / RoHS Status:
PackagingTape & Reel (TR)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Meta Part Number2SC3356-T1B-R25-A-ND
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Gain11.5dB
Power - Max200mW
Detailed DescriptionRF Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Supplier Device PackageSOT-23-3
Voltage - Collector Emitter Breakdown (Max)12V
Series-
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Package / CaseTO-236-3, SC-59, SOT-23-3
Frequency - Transition7GHz

Data sheet: Work in prgress, stay tuned!

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