BSS123-7-F N-Channel MOSFET Specifications & Guide

Author: ANDESOURCE Date: 26/09/04
297

The BSS123-7-F is an N-channel enhancement-mode MOSFET housed in a compact SOT-23 package. It is suitable for applications such as small servo motor control, MOSFET gate driving, and low-current switching.

 

What Is BSS123-7-F?

The BSS123-7-F N-channel enhancement-mode FET manufactured by Diodes Incorporated using its proprietary high-density advanced trench technology.

In terms of key electrical specifications, the BSS123-7-F features a maximum drain-source voltage (VDS) of 100V, a continuous drain current (ID) of up to 170mA, and a gate-source voltage (VGS) of ±20V. Its maximum on-state resistance (RDS(on)) is approximately 6Ω at VGS = 10V, with an operating temperature range of -55°C to +150°C. It is suitable for electronic circuits where compact size and reliable switching control are required.

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BSS123-7-F Specifications

This section lists the key specifications of the BSS123-7-F diode.

Parameter

Value

Part Number

BSS123-7-F

Manufacturer

Diodes Incorporated

Input   Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

Drive   Voltage (Max Rds On, Min Rds On)

10V

Lead Free   Status / RoHS Status

Lead free /   RoHS Compliant

Packaging

Tape &   Reel (TR)

FET Type

N-Channel

Technology

MOSFET   (Metal Oxide)

Rds On (Max) @   Id, Vgs

6 Ohm @ 170mA,   10V

Current -   Continuous Drain (Id) @ 25°C

170mA (Ta)

Drain to   Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Mounting Type

Surface Mount

Vgs(th)   (Max) @ Id

2V @ 1mA

Power   Dissipation (Max)

300mW (Ta)

Operating   Temperature

-55°C ~ 150°C   (TJ)

Package

SOT-23-3

Base Part   Number

BSS123

 

BSS123-7-F Pinout

 BSS123-7-F N-Channel MOSFET Specifications & Guide

The BSS123-7-F is housed in a SOT-23 package with three pins: Drain (D), Gate (G), and Source (S). The functions of each pin are as follows:

l  D (Drain): The drain pin connects to the load or drain-side circuit and carries the drain current.

l  G (Gate): The gate pin controls the MOSFET's turn-on and turn-off by applying a gate-source voltage (VGS) to control the D-S channel.

l  S (Source): The source pin provides the current return path and serves as the reference point for the gate-source voltage.

 

How Does BSS123-7-F Work?

The BSS123-7-F controls the conduction state between the Drain (D) and Source (S) through the voltage applied to the Gate (G). When VGS is below the gate threshold voltage, the D-S channel remains essentially off and the drain current is very small. When VGS exceeds the threshold, the electric field generated by the gate forms a conductive channel in the semiconductor, allowing current to flow from D to S.

With its low-level logic triggering characteristic, the BSS123-7-F can be driven by a high-level output from a microcontroller GPIO pin, allowing the transistor to turn on quickly. When the GPIO output goes low, the conductive channel disappears and the circuit switches off rapidly, enabling high-speed electronic switching control for small signals or low-power loads.

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BSS123-7-F Features and Benefits

Here are the core features of BSS123-7-F below.

l  Low Gate Threshold Voltage

l  Low Input Capacitance

l  Fast Switching Speed

l  Low Input/Output Leakage

l  High Drain-Source Voltage Rating

l  Totally Lead-Free & Fully RoHS Compliant

l  Halogen- and Antimony-Free. "Green" Device

l  This part is qualified to JEDEC standards (as referenced in AEC-Q) for High Reliability.

l  An automotive-compliant part is available under a separate datasheet (BSS123Q)

 

BSS123-7-F Applications

The BSS123-7-F is suitable for a variety of low-current switching and control circuits. Common applications include:

 

1. Small Servo Motor Controls

The BSS123-7-F can be used in small servo motor control circuits to quickly control the switching of motor-related loads through gate voltage, making it suitable for compact motor control systems.

 

2. Power MOSFET Gate Drivers

The device can be used in power MOSFET gate driver circuits to assist in driving power MOSFETs through fast switching control signals, making it suitable for power management and switching control circuits.

 

3. Switching Applications

With good switching response characteristics, the BSS123-7-F can be used as a low-current electronic switch for fast switching control of small loads, signals, or control lines.

 

4. Embedded Control Systems

Its compact SOT-23 package and low drive requirements make it suitable for embedded control circuits, where it can work with MCUs or logic controllers for load and signal control.

 

5. Industrial Control Circuits

The BSS123-7-F can be used for auxiliary switching, signal control, and low-power load switching in industrial control equipment, providing a simple switching solution for compact control circuits.

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BSS123-7-F vs. BSS123

The BSS123-7-F and BSS123 have essentially the same core electrical performance. The main differences are in packaging and part-number suffixes.

l  "-7" suffix: Indicates 7-inch Tape and Reel packaging for automated SMT assembly.

l  "-F" suffix: Indicates a Lead-Free and RoHS-compliant version.

The BSS123-7-F is therefore a lead-free, tape-and-reel version of the BSS123, with the same basic function and application.

 

How to Test the BSS123-7-F?

Testing the BSS123-7-F, an N-channel MOSFET in a SOT-23 package, usually requires a multimeter in diode or resistance mode. Confirm the pinout before testing.

 

Step 1: Remove the Device

Desolder the BSS123-7-F from the circuit and place it on an insulated or ESD-safe surface. In-circuit testing may be affected by other components.

 

Step 2: Discharge the Device

Briefly short the G, D, and S pins with metal tweezers or a wire to discharge any residual charge.

 

Step 3: Test the Body Diode

Set the multimeter to diode mode. Connect the red probe to S and the black probe to D. A reading of about 0.4–0.9 V is expected. Reverse the probes; the meter should show OL.

 

Step 4: Turn the MOSFET On

Keep the black probe on S and briefly touch the red probe to G to charge the gate. Then move the red probe to D. The reading should drop significantly, close to 0 V, or the buzzer may sound, indicating that the channel is conducting.

 

Step 5: Turn the MOSFET Off

Keep the red probe on D and briefly touch the black probe to G to discharge the gate. Then move it back to S. The reading should return to the original 0.4–0.9 V body-diode reading or show OL, indicating that the channel is off.

 

BSS123-7-F Package Outline Dimensions

 BSS123-7-F N-Channel MOSFET Specifications & Guide

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BSS123-7-F N-Channel MOSFET Specifications & Guide

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