In an era where wireless communication drives the backbone of innovation, the demand for RF components that combine superior performance with cost efficiency is greater than ever. Stepping up to this need, ANDESOURCE introduces its high perfomance, affordable HOLTO RF chip alternative solutions. One of those solutions, HTN8G27S010P (HTN010W), is designed to meet the challenges of modern wireless communication systems.This powerful LDMOS amplifier is setting a new standard in versatility, efficiency, and reliability.
Key Specifications That Define Excellence
HOLTO RF Chip Model | Equivalent Chip |
(shortened to HTN010W) | AFT27S010NT1/MW6S010NR1 |
Key Specifications | |
Min.Freq.(MHz) | 400 |
Max.Freq.(MHz) | 2700 |
VDD(V) | 28 |
Saturation Output Power | 10W |
Pavg(dBm) | 31 |
EFF@Pavg | 18% |
Gain(dB) | 18.9 |
ACPR(dBc) | -42.5 |
Test Freq.(MHz) | 2645 |
Package | PQFN6x5 |
Process | LDMOS |
Application | RF Base Station MACRO RRU |
Exceptional Features for Wireless Communication
Wide Bandwidth Coverage
HTN8G27S010P operates across a frequency range of 400–2700 MHz. This broad coverage allows it to support various wireless communication standards, showcasing its high flexibility and versatility.
High Output Power and Efficiency
With a saturated output power of 10W, this amplifier demonstrates excellent performance in high-power applications. Its efficiency exceeds 48% across multiple bands, contributing to reduced energy consumption and prolonged battery life, which is particularly important for portable devices. High efficiency translates to lower energy use and reduced heat generation, enhancing the device's longevity and lowering maintenance costs.
Exceptional Thermal Stability and Robust Design
HTN8G27S010P features a low thermal resistance package, ensuring excellent thermal stability. Additionally, its enhanced robust design guarantees long-term reliable operation under harsh environments without component degradation, extending product lifespan.
Integrated Enhanced ESD Protection
Built-in electrostatic discharge (ESD) protection increases the product's reliability by reducing the risk of damage from static discharges, which is crucial for RF devices.
Ease of Integration and Maintenance
Its PDFN6X5 packaging facilitates integration into various RF modules. The low thermal resistance packaging and robust design also simplify maintenance and reduce associated costs.
High Gain
Provides 18.6 dB of gain at critical frequency bands (e.g., 2600 MHz), improving signal transmission range and quality.
High Linearity
Features low AM/PM distortion and high IMD performance, ensuring signal quality and reducing adjacent channel interference.
Compliance with Industry Standard
Compliant with RoHS standard, meeting global market requirements.
Versatile Applications in Wireless Communication Systems
HTN8G27S010P supports a wide range of mobile communication standards, including CDMA, W-CDMA, GSM EDGE, MC-GSM, TDD/FDD LTE, and WiMAX. And with its broad frequency coverage, high output power, superior efficiency, and excellent stability, it is a reliable choice for numerous wireless communication systems. These include, but are not limited to, mobile communication base stations, wireless local area networks (WLAN), satellite communication systems, and radar applications.
Unlock Exceptional Value with ANDESOURCE HOLTO RF Chips
With ANDESOURCE HOLTO RF chip alternative solutions, you unlock significant cost savings (over 50% savings compared to premium brand's equivalent), stringent quality control,reliable supply chains, and original factory debugging support.
Why stop at HTN8G27S010P? ANDESOURCE’s HOLTO series offers a comprehensive range of RF chip solutions designed to empower your wireless communication applications. From mobile communication base stations to radar applications, there’s a HOLTO RF chip ready to optimize your projects.
Ready to elevate your RF capabilities? Request a quote today and discover how ANDESOURCE’s HOLTO RF chips can drive your success. Explore the related HOLTO lineup now.
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