The rapid evolution of RF energy technologies is transforming industries, from industrial heating to medical sciences. Solid-state RF power amplifiers offer superior power density, precision, and reliability compared to traditional magnetron systems. The HTH2D25P300H, a 300W GaN-on-SiC HEMT Power Amplifier from HOLTO, is designed to meet the demands of high-frequency RF applications. Operating in the 2.4–2.5 GHz range, this internally input/output pre-matched discrete amplifier delivers exceptional performance, making it a cornerstone for innovative RF solutions. ANDESOURCE explores the key specifications, highlights, and applications of the HTH2D25P300H, showcasing its role in advancing RF technology.
Key Specifications at a Glance
The HTH2D25P300H is engineered for high-power, high-efficiency RF systems. Below are its core specifications extracted from official datasheet (Rev. 1.2, June 2024). For detailed specifications, please contact us .
HTH2D25P300H Key Specifications | |
Min.Freq.(MHz) | 2400 |
Max.Freq.(MHz) | 2500 |
VDD(V) | 48 |
Psat(W) | 300 (nominal) |
P3dB (W, CW) | 309–363 |
EFF (%, CW) | 71.5–72.3 |
Gain (dB, CW) | 17.3–19.1 |
Package | ACC2110S-4L |
Process | GaN on SiC |
Test Conditions:
25°C, VDD = +48 Vdc, IDQ = 100 mA, Continuous Wave (CW), tested on HOTLO Application Board.
These specifications ensure the HTH2D25P300H delivers robust, reliable performance for demanding RF applications.
Product Highlights
The HTH2D25P300H stands out for its advanced features, tailored for high-frequency RF systems:
High Power and Efficiency: The amplifier provides a nominal saturated output power (Psat) of 300 W. Under CW conditions, it achieves P3dB output power ranging from 309 W (2500 MHz) to 363 W (2400 MHz), with efficiency of 71.5–72.3%. At 2450 MHz, it delivers 324 W P3dB with 72.3% efficiency. Under pulsed conditions (10% duty cycle, 100 µs pulse width), P3dB ranges from 302 W (2500 MHz) to 398 W (2400 MHz), with efficiency up to 74.9% at 2450 MHz, demonstrating versatility across operating modes.
Robust Design: The GaN-on-SiC process and low thermal resistance package (0.38°C/W junction-to-case, Tj = 97°C under DC conditions) support reliable operation under high-power conditions, with a maximum junction temperature of 225°C. The amplifier withstands a 10:1 VSWR at 300 W average power (pulsed, 10% duty cycle, 100 µs pulse width, 2450 MHz) without degradation, ensuring durability under mismatched conditions.
Compact and Cost-Effective Reference Design: The evaluation board (EVB) utilizes a compact PCB (RT/Duroid 6035HTC, 30 mil thickness, er = 3.5 ± 0.05) with components like 20 pF MLCC capacitors and N-type connectors, minimizing footprint.
Enhanced ESD Protection: Internally integrated ESD design enhances reliability, with ratings of Class 1B (HBM), Class A (MM), and Class III (CDM), safeguarding the device in challenging environments.
System-Level Scalability (Multi-Device Parallel Architecture): The official evaluation board (EVB) for the HTH2D25P300H is designed with a compact, cost-optimized layout for single-device testing. However, the device supports scalable, multi-device parallel architectures,where multiple HTH2D25P300H amplifiers are combined in a multi-path parallel circuit configuration to achieve kilowatt-level RF output power. This design ensures efficient power combining and reliable performance, enabling cost-effective solutions for high-power industrial RF applications.
These features make the HTH2D25P300H an ideal choice for engineers seeking high-performance, reliable RF amplification.
Application Analysis
The HTH2D25P300H is versatile, addressing a range of high-frequency RF applications:
RF Industrial Heating and Drying: The amplifier’s high output power (309–363 W CW) and efficiency (71.5–72.3%) enable precise energy delivery for processes like material drying and curing. Its thermal stability supports consistent performance in continuous operation.
Solid-State Commercial and Industrial Cooking: With fine control over power and frequency, the HTH2D25P300H supports advanced cooking systems, delivering uniform heating for faster, more efficient food preparation.
Plasma Lighting: The amplifier’s gain (17.3–19.1 dB CW) and robust design make it suitable for generating stable, high-intensity plasma discharges, critical for energy-efficient lighting solutions.
Semiconductor Equipment: The 2.4–2.5 GHz range and high efficiency support plasma-based processes in semiconductor manufacturing, such as etching and deposition, where reliability is paramount.
Automotive Ignition: The HTH2D25P300H’s compact design and high power output enable efficient ignition systems, improving fuel combustion and reducing emissions in automotive applications.
Medical & Scientific Sciences: Its precision and stability are ideal for medical therapies (e.g., hyperthermia) and scientific research, where controlled RF energy delivery is essential for safe, effective outcomes.
Unlock Superior Performance and Value with HOLTO RF Solutions from ANDESOURCE
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Don’t stop at the HTH2D25P300H—explore the full HOLTO lineup to find RF solutions precisely tailored to your specific application needs.
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